surge components, inc. 95 east jefryn blvd deer park, ny 11729 (631) 595-1818 2 1. description the SES12VD923-2U esd protector is designed to repl ace multilayer varistors (mlvs) in portable applications such as c ell phones, notebook computers, and pdas. they feature large c ross-sectional area junctions for conducting high transient curren ts, offer desirable electrical characteristics for board level protecti on, such as fast response time, lower operating voltage, lower clamp ing voltage and no device degradation when compared to mlvs. the ses12 vd923-2u protects sensitive semiconductor components from da mage or upset due to electrostatic discharge (esd) and other volt age induced transient events. the SES12VD923-2U is available in a sod-923 package with working voltages of 12 volt. it gives designer the flexibility to protect one unidirectional line in applications where arrays are not practical. additionally, it may be sprinkled aro und the board in applications where board space is at a premium. it may be used to meet the esd immunity requirements of iec 61000-4-2 , level 4 (15kv air, 8kv contact discharge) 2. feature 140 watts peak pulse power (tp=8/20us) transient protection for data lines to iec 61000-4-2(esd)25kv(air),30kv(contact) iec 61000-4-4(eft) 40a(5/50ns) iec 61000-4-5(lightning) 24a(8/20us) small package for use in portable electronics suitable replacement for mlvs in esd protection a pplications protect one i/o or power line low clamping voltage stand off voltage : 12v low leakage current solid-state silicon-avalanche technology small body outline dimensions: 1.0mm*0.6mm*0.4mm
surge components, inc. 95 east jefryn blvd deer park, ny 11729 (631) 595-1818 3 3. application cell phone handsets and accessories personal digital assistants (pdas) notebooks, desktops, and servers portable instrumentation cordless phones digital cameras peripherals mp3 players 4. electrical characteristics per line@25 (unless otherwise specified) parameter symbol conditions min. typ. max. units working voltage v rwm 12 v breakdown voltage v br i t =1ma 13.5 v reverse leakage current i r v rwm =12v v 1.0 ua forward voltage v f i f =10ma 0.8 clamping voltage v c i pp =5.9a t p =8/20us 23.7 v junction capacitance c j v r =0v f=1mhz 30 pf 5. absolute maximum rating @25 rating symbol value units peak pulse power(t p =8/20s) p pp 140 watts maximum peak pulse current(t p =8/20s) i pp 5.9 amps lead soldering temperature t l 260(10 sec) operating temperature t j -55 to +125 storage temperature t stg -55 to +150
surge components, inc. 95 east jefryn blvd deer park, ny 11729 (631) 595-1818 4 6.typical characteristics
surge components, inc. 95 east jefryn blvd deer park, ny 11729 (631) 595-1818 5 7. application informaiton device connection options SES12VD923-2U is designed to protect one data, i/o, or power supply line. the device is unidirectional and may be used on lines where the signal polarity is above ground. th e cathode dot should be placed towards the line tha t is to be protected. circuit board layout recommendations for suppressio n of esd. good circuit board layout is critical for the suppr ession of esd induced transients. the following gui delines are recommended: place the tvs near the input terminals or connec tors to restrict transient coupling minimize the path length between the tvs and the protected line. minimize all conductive loops including power an d ground loops. the esd transient return path to ground should b e kept as short as possible. never run critical signals near board edges. use ground planes whenever possible, for multipl ayers printed-circuit boards, use ground vias. keep parallel signal paths to a minimum. avoid running protection conductors in parallel with unprotected conductor. minimize all printed-circuit board conductive lo ops including power and ground loops. avoid using shared transient return paths to a c ommon ground point. 8. product dimension notes: 1.dimensioning and tolerancing per ansi y14.5m, 1982 2.controlling dimension: millimeters. 3.maximum lead thickness includes lead finish thickness.minimum lead thickness is the minimum thickness of base material dim millimeters inches min nom max min nom max a 0.36 0.40 0.43 0.014 0.016 0.017 b 0.15 0.20 0.25 0.006 0.008 0.010 c 0.07 0.12 0.17 0.003 0.005 0.007 d 0.75 0.80 0.85 0.030 0.031 0.033 e 0.55 0.60 0.65 0.022 0.024 0.026 h e 0.95 1.00 1.05 0.037 0.039 0.041 l 0.05 0.10 0.15 0.002 0.004 0.006
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